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| Power Transistor Arrays (F-MOS FETs) PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) s Features q High avalanche energy capacity q High electrostatic breakdown voltage q No secondary breakdown q High breakdown voltage, large allowable power dissipation q Allowing Low-voltage drive 25.30.2 1.650.2 9.50.2 8.0 unit: mm 4.00.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 4.40.5 0.50.15 1.00.25 2.540.2 9!2.54=22.860.25 0.80.25 0.50.15 C1.50.5 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * 1 2 3 4 5 6 7 8 9 10 Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 100 15 20 3 9 22.5 15 3.5 150 -55 to +150 Unit V V A A mJ W C C 1 10 2 3 5 7 9 DC Pulse Non repetition TC = 25C Ta = 25C G: Gate D: Drain S: Source 10-Lead Plastic SIL Package Internal Connection 4 6 8 L = 5mH, IL = 3A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss ton tf td(off) Conditions VDS = 80V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 2A VGS = 4V, ID = 2A VDS = 10V, ID = 2A IDR = 3A, VGS = 0 130 VDS = 10V, VGS = 0, f = 1MHz 160 25 VGS = 10V, ID = 2A VDD = 50V, RL = 25 0.2 0.3 1.5 2.5 85 1 300 400 4 -1.6 min typ max 10 10 115 2.5 450 600 Unit A A V V m m S V pF pF pF s s s Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) 1 Power Transistor Arrays (F-MOS FETs) Area of safe operation (ASO) 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 IDP t=100s ID 1ms 10ms 100ms DC 24 PU7457 EAS Tj 25 PD Ta Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink Non repetitive pulse TC=25C ID=3A 20 20 Drain current ID (A) 16 (1) 12 15 10 8 (2) 4 5 (3) 0 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Ambient temperature Ta (C) Junction temperature Tj (C) IAS L-load 10 TC=25C 8 7 ID VGS 6 VDS=10V TC=25C Vth TC VDS=10V ID=1mA 5 Avalanche current IAS (A) 3 ID Drain current ID (A) 22.5mJ 1 6 5 4 3 2 1 0 Gate threshold voltage Vth (V) 0 1 2 3 4 5 6 4 0.3 3 0.1 2 0.03 1 0.01 1 3 10 30 100 0 0 25 50 75 100 125 150 L-load (mH) Gate to source voltage VGS (V) Case temperature TC (C) ID VDS Drain to source ON-resistance RDS(on) () 8 7 VGS=10V 6 5 4 3 3V 2 1 0 0 10 20 30 40 600 RDS(on) ID 5 | Yfs | ID Forward transfer admittance |Yfs| (S) TC=25C VDS=10V TC=25C 4 500 VGS=4V Drain current ID (A) 4V 3.5V 400 3 300 10V 200 2 100 1 2.5V 15W 50 60 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A) 2 Power Transistor Arrays (F-MOS FETs) Ciss, Coss, Crss VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 104 f=1MHz TC=25C 80 PU7457 ton, tf, td(off) ID 16 ID=3A TC=25C 14 12 10 VDS=25V 8 50V 6 4 2 VDS 0 12 4.0 3.5 VDD=50V VGS=10V TC=25C VDS, VGS Qg Drain to source voltage VDS (V) Gate to source voltage VGS (V) 70 60 50 40 30 20 10 0 103 Switching time ton,tf,td(off) (s) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 td(off) Coss 102 Ciss Crss 10 VGS tf ton 1 0 20 40 60 80 100 0 2 4 6 8 10 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) PZSM tp 10000 3000 tp 1000 300 100 30 10 3 1 0.1 Zener diode power PZSM (W) 0.3 1 3 10 30 100 Pulse width tp (ms) 3 |
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